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| 2SK3776-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID ID(puls] VGS IAR EAS EAR dVDS/dt dV/dt PD Tch Tstg Ratings 300 300 53 212 30 53 1013.9 41 20 5 410 2.50 +150 -55 to +150 Unit V V A A V A mJ mJ Remarks VGS=-30V Equivalent circuit schematic Drain(D) Gate(G) Note *1 Note *2 Note *3 Source(S) Note *1:Tch < 150C,Repetitive and Non-repetitive = Note *2:StartingTch=25C,IAS=22A,L=3.03mH, VCC=48V,RG=50 EAS limited by maximum channel temperature and Avalanche current. See to the `Avalanche Energy' graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the `Transient Thermal impedance' graph. kV/s VDS= 300V < kV/s Note *4 Tc=25C W Ta=25C C C Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VSD trr Qrr Symbol Rth(ch-c) Rth(ch-a) < Note *4:IF < -ID, -di/dt=50A/s,VCC BVDSS,Tch< 150C = = = Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS Tch=25C VDS=300V VGS=0V Tch=125C VDS=240V VGS=0V VGS=30V VDS=0V ID=26.5A VGS=10V ID=26.5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=180V ID=26.5A VGS=10V RGS=10 VCC=150V ID=53A VGS=10V IF=53A VGS=0V Tch=25C IF=53A VGS=0V -di/dt=100A/s Tch=25C Test Conditions channel to case channel to ambient Min. 300 3.0 Typ. Max. 5.0 25 250 100 72 Units V V A nA m S pF 12 58 24 3600 5475 610 915 30 45 40 60 58 87 82 123 10 15 80 120 30 45 25 38 1.20 1.50 420 5.0 ns nC V ns C Thermal characteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd Min. Typ. Max. 0.305 50.0 Units C/W C/W 1 2SK3776-01 Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 500 120 Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 C 20V 10V 8V 400 100 80 300 PD [W] ID [A] 60 7V 200 40 6.5V 100 20 VGS=6.0V 0 0 25 50 75 100 125 150 0 0 5 10 Tc [C] VDS [V] 100 Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C 100 Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C 10 10 ID[A] 1 1 0.1 0.1 0.1 gfs [S] 0 1 2 3 4 5 6 7 8 9 10 1 10 100 VGS[V] ID [A] 0.20 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C VGS=6V 6.5V 7V 0.20 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=26.5A,VGS=10V 0.15 0.15 RDS(on) [ ] RDS(on) [ ] max. 0.10 typ. 0.10 8V 10V 20V 0.05 0.05 0.00 0 10 20 30 40 50 60 70 80 90 100 0.00 -50 -25 0 25 50 75 100 125 150 ID [A] Tch [C] 2 2SK3776-01 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A FUJI POWER MOSFET 7.0 6.5 6.0 5.5 5.0 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=53A,Tch=25 C 12 Vcc= 60V max. 150V 10 240V VGS(th) [V] 4.5 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min. VGS [V] 4.0 8 6 4 2 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 Tch [C] Qg [nC] 10 4 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Ciss 1000 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25C 10 3 100 C [pF] 10 2 IF [A] 10 3 Coss 10 Crss 10 1 1 10 0 10 -1 10 0 10 1 10 2 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VDS [V] VSD [V] 10 4 Typical Switching Characteristics vs. ID t=f(ID):Vcc=180V,VGS=10V,RG=10 1200 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=53A IAS=22A 1000 10 3 tr td(off) td(on) 800 IAS=32A t [ns] 10 2 EAV [mJ] 600 IAS=53A 400 tf 10 1 200 10 0 10 -1 10 0 10 1 10 2 10 3 0 0 25 50 75 100 125 150 ID [A] starting Tch [C] 3 2SK3776-01 FUJI POWER MOSFET 10 2 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25 C,Vcc=48V Single Pulse Avalanche Current I AV [A] 10 1 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 1 Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/fdt/scd/ 4 |
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